What is the TFT Panel Innolux process?

TFT Panel Innolux process

First, the movement and alignment of liquid crystal molecules need to be driven by electrons. Therefore, on TFT glass, the carrier of liquid crystal, there must be a conductive part to control the movement of liquid crystal. ITO (Indium Tin Oxide, transparent conductive metal) will be used to do this.ITO is transparent, also known as thin-film conductive crystals, so that the backlight is not blocked.

The different alignment of liquid crystal molecules and the fast movement change can ensure that each pixel accurately displays the corresponding color, and the image changes accurately and quickly, which requires precise control of liquid crystal molecules. The ITO film needs special treatment, just like printed circuits on PCB boards, which draw conductive lines across the LCD board.

Conventional LCD screens are constructed to display pixels using Back Channel Etched (BCE) TFT. The specific structure is shown in the following figure:

For the back channel etched TFT structure of the array panel, the main technological process can be divided into five steps (five illuminations) according to the order of the layers and the relationship between the layers.

The first layer is the Gate electrode.

The second layer is the Gate insulation layer

The third layer is the Source/Drain electrodes

The fourth layer is Contact Hole

The fifth layer is the ITO electrodes

TFT Panel Innolux process types are formed once as follows:

Step 1: Gate and scan line formation

Specific processes include metal sputtering of the Gate layer into film, Gate lithography, Gate wet etching, etc. After these processes, a scanning line and a grid electrode, the Gate electrode, are finally formed on the glass substrate. The graphics obtained after the process is completed are shown in the following figure:

Photolithography is the process of copying the Mask graphic structure onto the glass substrate to be etched. Three main processes: light resistance coating, exposure, development

Wet etching: Wet etching uses an appropriate corrosive solution to chemically remove the film that needs to be removed

Dry etching: Remove the film by chemical reaction of process gas with the film and bombardment of the film by plasma.

Step 2: Formation of grid insulation and amorphous silicon island

Specific processes include PECVD three layers continuous film formation, small island lithography, small island dry engraving, and so on. After these processes, amorphous silicon islands for TFT are finally formed on the glass substrates. The graphics obtained after the process is completed are shown in the following figure:

Step 3: Formation of source, drain (S/D), data, and channel

Specific processes include: sputtering of S/D metal layer into film, S/D lithography, S/D wet lithography, channel dry lithography, etc. After these processes, the source, drain electrodes, channels, and data lines of TFT are finally formed on the glass substrates. The TFT has now been made. The graphics obtained after the process is completed are shown in the following figure:

Step 4: Protect the formation of Passivation and Via

Specific processes include PECVD film forming, photolithography, through-hole dry engraving, etc. After these processes, the TFT channel protection insulation layer and conduction holes are finally formed on the glass substrates. The graphics obtained after the process is completed are shown in the following figure:

Step 5: Formation of Transparent Pixel Electrode ITO

Specific processes include: sputtering of ITO transparent electrode layer into film, ITO lithography, ITO wet etching, etc. After these processes, a transparent pixel electrode is finally formed on the glass substrate. The graphics obtained after the process is completed are shown in the following figure:

At this point, the entire array operation is completed. Simply put, the 5-Light array operation is: 5 times film formation + 5 times etching

Guangzhou Innolux Optronics Co., Ltd

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E-mail: sales@innoluxlcdpanel.com
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